Ozturk, M. K. Et Al. 2013. Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.1 , 83-88.

Ozturk, M. K., Arslan, E., KARS DURUKAN, İ., ÖZÇELİK, S., & ÖZBAY, E., (2013). Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.1, 83-88.

Ozturk, Mustafa Et Al. "Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.1, 83-88, 2013

Ozturk, Mustafa K. Et Al. "Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.1, pp.83-88, 2013

Ozturk, M. K. Et Al. (2013) . "Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.1, pp.83-88.

@article{article, author={Mustafa K. Ozturk Et Al. }, title={Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2013, pages={83-88} }