Atmaca, G. Et Al. 2015. The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures. 10th All-Russian Conference Gallium, aluminum and indium nitrides .

Atmaca, G., Malin, T., Kutlu, E., Ardalı, Ş., Narin, P., Mansurov, V., ... LİŞESİVDİN, B.(2015). The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures . 10th All-Russian Conference Gallium, aluminum and indium nitrides

Atmaca, Gokhan Et Al. "The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures," 10th All-Russian Conference Gallium, aluminum and indium nitrides, 2015

Atmaca, Gokhan Et Al. "The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures." 10th All-Russian Conference Gallium, aluminum and indium nitrides , 2015

Atmaca, G. Et Al. (2015) . "The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures." 10th All-Russian Conference Gallium, aluminum and indium nitrides .

@conferencepaper{conferencepaper, author={Gokhan Atmaca Et Al. }, title={The Effect of In Situ Si3N4 Passivation on Hot Electron energy Relaxation Rates in AlGaN GaN Heterostructures}, congress name={10th All-Russian Conference Gallium, aluminum and indium nitrides}, city={}, country={}, year={2015}}