Kanbur, H. Et Al. 2005. The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes. APPLIED SURFACE SCIENCE , vol.252, no.5 , 1732-1738.

Kanbur, H., Altindal, Ş., & TATAROĞLU, A., (2005). The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes. APPLIED SURFACE SCIENCE , vol.252, no.5, 1732-1738.

Kanbur, H, ŞEMSETTİN ALTINDAL, And ADEM TATAROĞLU. "The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes," APPLIED SURFACE SCIENCE , vol.252, no.5, 1732-1738, 2005

Kanbur, H Et Al. "The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes." APPLIED SURFACE SCIENCE , vol.252, no.5, pp.1732-1738, 2005

Kanbur, H. Altindal, Ş. And TATAROĞLU, A. (2005) . "The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes." APPLIED SURFACE SCIENCE , vol.252, no.5, pp.1732-1738.

@article{article, author={H Kanbur Et Al. }, title={The effect of interface states, excess capacitance and series resistance in the Al/SiO2/P-Si Schottky diodes}, journal={APPLIED SURFACE SCIENCE}, year=2005, pages={1732-1738} }