Korucu, D. Et Al. 2013. Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.2 , 344-351.

Korucu, D., Turut, A., TURAN, R., & Altindal, Ş., (2013). Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.2, 344-351.

Korucu, D. Et Al. "Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.2, 344-351, 2013

Korucu, D. Et Al. "Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.2, pp.344-351, 2013

Korucu, D. Et Al. (2013) . "Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.16, no.2, pp.344-351.

@article{article, author={D. Korucu Et Al. }, title={Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2013, pages={344-351} }