Cetın, S. Ş. Et Al. 2018. Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer. Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications , (Yozgat, Turkey).

Cetın, S. Ş., Efkere, H. İ., Sertel, T., Tataroğlu, A., & Özçelik, S., (2018). Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer . Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications, Yozgat, Turkey

Cetın, SAİME Et Al. "Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer," Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications, Yozgat, Turkey, 2018

Cetın, SAİME Ş. Et Al. "Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer." Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications , Yozgat, Turkey, 2018

Cetın, S. Ş. Et Al. (2018) . "Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer." Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications , Yozgat, Turkey.

@conferencepaper{conferencepaper, author={SAİME ŞEBNEM AYDIN Et Al. }, title={Dielectric Properties of MOS Device Based on TiO2/SiO2 Oxide Layer}, congress name={Seventh Bozok Science Workshop: Boron and Boron Containing Nanomaterials with Applications}, city={Yozgat}, country={Turkey}, year={2018}}