YÜKSELTÜRK, E. Et Al. 2018. Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,. 2nd International Conference on Innovations in NaturalScience and Engineering , (KYİV, Ukraine).

YÜKSELTÜRK, E., BENGİ, S., & BÜLBÜL, M. M., (2018). Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel, . 2nd International Conference on Innovations in NaturalScience and Engineering, KYİV, Ukraine

YÜKSELTÜRK, ESRA, SEDA BENGİ, And MEHMET MAHİR BÜLBÜL. "Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,," 2nd International Conference on Innovations in NaturalScience and Engineering, KYİV, Ukraine, 2018

YÜKSELTÜRK, ESRA Et Al. "Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,." 2nd International Conference on Innovations in NaturalScience and Engineering , KYİV, Ukraine, 2018

YÜKSELTÜRK, E. BENGİ, S. And BÜLBÜL, M. M. (2018) . "Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,." 2nd International Conference on Innovations in NaturalScience and Engineering , KYİV, Ukraine.

@conferencepaper{conferencepaper, author={ESRA YÜKSELTÜRK Et Al. }, title={Electrical propertiesof Al/HfO2/p-Si MOS device in dark and under 250 W illuminationlevel,}, congress name={2nd International Conference on Innovations in NaturalScience and Engineering}, city={KYİV}, country={Ukraine}, year={2018}}