Al Abbas, J. M. Et Al. 2017. The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.11 , 328-331.

Al Abbas, J. M., NARİN, P., Atmaca, G., Kutlu, E., Sarikavak-Lisesivdin, B., & Lisesivdin, S. B., (2017). The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.11, 328-331.

Al Abbas, J. Et Al. "The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.11, 328-331, 2017

Al Abbas, J. M. Et Al. "The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.11, pp.328-331, 2017

Al Abbas, J. M. Et Al. (2017) . "The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.11, pp.328-331.

@article{article, author={J. M. Al Abbas Et Al. }, title={The effect of doping in different layers on 2DEG for ultrathin-barrier A1N/GaN heterostructures}, journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS}, year=2017, pages={328-331} }