Çavdar, Ş. Et Al. 2024. Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure. JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.35, no.1022 , 1-19.

Çavdar, Ş., Oruç, P., Eymur, S., & Tuğluoğlu, N., (2024). Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure. JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.35, no.1022, 1-19.

Çavdar, ŞÜKRÜ Et Al. "Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure," JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.35, no.1022, 1-19, 2024

Çavdar, ŞÜKRÜ Et Al. "Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure." JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.35, no.1022, pp.1-19, 2024

Çavdar, Ş. Et Al. (2024) . "Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure." JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.35, no.1022, pp.1-19.

@article{article, author={ŞÜKRÜ ÇAVDAR Et Al. }, title={Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure}, journal={JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS}, year=2024, pages={1-19} }