Demir, G. E. Et Al. 2019. Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.14, no.5 , 653-659.

Demir, G. E., Yucedag, I., & Yeriskin, S. A., (2019). Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.14, no.5, 653-659.

Demir, Gulcin, Ibrahim Yucedag, And Seckin Altindal Yeriskin. "Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature," JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.14, no.5, 653-659, 2019

Demir, Gulcin E. Et Al. "Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature." JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.14, no.5, pp.653-659, 2019

Demir, G. E. Yucedag, I. And Yeriskin, S. A. (2019) . "Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature." JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.14, no.5, pp.653-659.

@article{article, author={Gulcin Ersoz Demir Et Al. }, title={Characterization of Surface States and Their Relaxation Time in Al/ZnO/p-GaAs Structure by Admittance Method at Room Temperature}, journal={JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS}, year=2019, pages={653-659} }