Arslan, E. Et Al. 2009. The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD. CURRENT APPLIED PHYSICS , vol.9, no.2 , 472-477.

Arslan, E., Ozturk, M. K., ÖZÇELİK, S., & ÖZBAY, E., (2009). The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD. CURRENT APPLIED PHYSICS , vol.9, no.2, 472-477.

Arslan, Engin Et Al. "The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD," CURRENT APPLIED PHYSICS , vol.9, no.2, 472-477, 2009

Arslan, Engin Et Al. "The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD." CURRENT APPLIED PHYSICS , vol.9, no.2, pp.472-477, 2009

Arslan, E. Et Al. (2009) . "The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD." CURRENT APPLIED PHYSICS , vol.9, no.2, pp.472-477.

@article{article, author={Engin Arslan Et Al. }, title={The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD}, journal={CURRENT APPLIED PHYSICS}, year=2009, pages={472-477} }