Cakmak, M. And Srivastava, G. 1998. Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1x1) surfaces. PHYSICAL REVIEW B , vol.57, no.8 , 4486-4492.

Cakmak, M., & Srivastava, G., (1998). Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1x1) surfaces. PHYSICAL REVIEW B , vol.57, no.8, 4486-4492.

Cakmak, MEHMET, And GP Srivastava. "Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1x1) surfaces," PHYSICAL REVIEW B , vol.57, no.8, 4486-4492, 1998

Cakmak, MEHMET And Srivastava, GP. "Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1x1) surfaces." PHYSICAL REVIEW B , vol.57, no.8, pp.4486-4492, 1998

Cakmak, M. And Srivastava, G. (1998) . "Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1x1) surfaces." PHYSICAL REVIEW B , vol.57, no.8, pp.4486-4492.

@article{article, author={MEHMET ÇAKMAK And author={GP Srivastava}, title={Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1x1) surfaces}, journal={PHYSICAL REVIEW B}, year=1998, pages={4486-4492} }