Arslan, E. Et Al. 2010. Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis. JOURNAL OF ELECTRONIC MATERIALS , vol.39, no.12 , 2681-2686.

Arslan, E., Butun, S., ŞAFAK ASAR, Y., & ÖZBAY, E., (2010). Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis. JOURNAL OF ELECTRONIC MATERIALS , vol.39, no.12, 2681-2686.

Arslan, Engin Et Al. "Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis," JOURNAL OF ELECTRONIC MATERIALS , vol.39, no.12, 2681-2686, 2010

Arslan, Engin Et Al. "Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis." JOURNAL OF ELECTRONIC MATERIALS , vol.39, no.12, pp.2681-2686, 2010

Arslan, E. Et Al. (2010) . "Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis." JOURNAL OF ELECTRONIC MATERIALS , vol.39, no.12, pp.2681-2686.

@article{article, author={Engin Arslan Et Al. }, title={Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis}, journal={JOURNAL OF ELECTRONIC MATERIALS}, year=2010, pages={2681-2686} }