Dokme, İ. 2007. The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes. PHYSICA B-CONDENSED MATTER , vol.388 , 10-15.

Dokme, İ., (2007). The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes. PHYSICA B-CONDENSED MATTER , vol.388, 10-15.

Dokme, İLBİLGE. "The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes," PHYSICA B-CONDENSED MATTER , vol.388, 10-15, 2007

Dokme, İLBİLGE. "The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes." PHYSICA B-CONDENSED MATTER , vol.388, pp.10-15, 2007

Dokme, İ. (2007) . "The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes." PHYSICA B-CONDENSED MATTER , vol.388, pp.10-15.

@article{article, author={İLBİLGE DÖKME}, title={The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes}, journal={PHYSICA B-CONDENSED MATTER}, year=2007, pages={10-15} }