Tuğluoğlu, N. Et Al. 2023. Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer. Journal of Materials Science: Materials in Electronics , vol.34, no.3 .

Tuğluoğlu, N., Eymur, S., & TURAN, N., (2023). Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer. Journal of Materials Science: Materials in Electronics , vol.34, no.3.

Tuğluoğlu, Nihat, Serkan Eymur, And NESLİHAN TURAN. "Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer," Journal of Materials Science: Materials in Electronics , vol.34, no.3, 2023

Tuğluoğlu, Nihat Et Al. "Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer." Journal of Materials Science: Materials in Electronics , vol.34, no.3, 2023

Tuğluoğlu, N. Eymur, S. And TURAN, N. (2023) . "Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer." Journal of Materials Science: Materials in Electronics , vol.34, no.3.

@article{article, author={Nihat Tuğluoğlu Et Al. }, title={Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer}, journal={Journal of Materials Science: Materials in Electronics}, year=2023}