T. Tunc Et Al. , "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.7, pp.947-950, 2010
Tunc, T. Et Al. 2010. Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.7 , 947-950.
Tunc, T., Dokme, İ., Altindal, Ş., & Uslu, I., (2010). Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.7, 947-950.
Tunc, T. Et Al. "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.7, 947-950, 2010
Tunc, T. Et Al. "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.7, pp.947-950, 2010
Tunc, T. Et Al. (2010) . "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.4, no.7, pp.947-950.
@article{article, author={T. Tunc Et Al. }, title={Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer}, journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS}, year=2010, pages={947-950} }