Atmaca, G. Et Al. 2009. Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs). JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5 , 578-582.

Atmaca, G., Elibol, K., LİŞESİVDİN, S. B., Kasap, M., & Ozbay, E., (2009). Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs). JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, 578-582.

Atmaca, G. Et Al. "Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, 578-582, 2009

Atmaca, G. Et Al. "Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, pp.578-582, 2009

Atmaca, G. Et Al. (2009) . "Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, pp.578-582.

@article{article, author={G. Atmaca Et Al. }, title={Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2009, pages={578-582} }