G. Atmaca Et Al. , "The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures," IX. Uluslararası Balkan Fizik Birliği Konferansı , 2015
Atmaca, G. Et Al. 2015. The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures. IX. Uluslararası Balkan Fizik Birliği Konferansı .
Atmaca, G., Narin, P., Kutlu, E., & LİŞESİVDİN, S. B., (2015). The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures . IX. Uluslararası Balkan Fizik Birliği Konferansı
Atmaca, Gökhan Et Al. "The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures," IX. Uluslararası Balkan Fizik Birliği Konferansı, 2015
Atmaca, Gökhan Et Al. "The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures." IX. Uluslararası Balkan Fizik Birliği Konferansı , 2015
Atmaca, G. Et Al. (2015) . "The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures." IX. Uluslararası Balkan Fizik Birliği Konferansı .
@conferencepaper{conferencepaper, author={Gökhan Atmaca Et Al. }, title={The Effect of Si3N4 Passivation with As Impurity on the Device Properties of AlGaN GaN HEMT Structures}, congress name={IX. Uluslararası Balkan Fizik Birliği Konferansı}, city={}, country={}, year={2015}}