Akın, B. Et Al. 2024. The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature. Materials Science in Semiconductor Processing , vol.184 .

Akın, B., A.Hameed, S., ALTINDAL YERİŞKİN, S., ULUSOY, M., & Durmuş, H., (2024). The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature. Materials Science in Semiconductor Processing , vol.184.

Akın, Buket Et Al. "The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature," Materials Science in Semiconductor Processing , vol.184, 2024

Akın, Buket Et Al. "The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature." Materials Science in Semiconductor Processing , vol.184, 2024

Akın, B. Et Al. (2024) . "The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature." Materials Science in Semiconductor Processing , vol.184.

@article{article, author={Buket Akın Et Al. }, title={The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature}, journal={Materials Science in Semiconductor Processing}, year=2024}