Gokcen, M. Et Al. 2012. The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs). CURRENT APPLIED PHYSICS , vol.12, no.2 , 525-530.

Gokcen, M., Tunc, T., Altindal, Ş., & Uslu, I., (2012). The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs). CURRENT APPLIED PHYSICS , vol.12, no.2, 525-530.

Gokcen, M. Et Al. "The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)," CURRENT APPLIED PHYSICS , vol.12, no.2, 525-530, 2012

Gokcen, M. Et Al. "The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)." CURRENT APPLIED PHYSICS , vol.12, no.2, pp.525-530, 2012

Gokcen, M. Et Al. (2012) . "The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)." CURRENT APPLIED PHYSICS , vol.12, no.2, pp.525-530.

@article{article, author={M. Gokcen Et Al. }, title={The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)}, journal={CURRENT APPLIED PHYSICS}, year=2012, pages={525-530} }