Maril, E. Et Al. 2015. On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.39 , 332-338.

Maril, E., Kaya, A., Cetinkaya, H. G., Kocyigit, S., & Altindal, Ş., (2015). On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.39, 332-338.

Maril, E. Et Al. "On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.39, 332-338, 2015

Maril, E. Et Al. "On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.39, pp.332-338, 2015

Maril, E. Et Al. (2015) . "On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.39, pp.332-338.

@article{article, author={E. Maril Et Al. }, title={On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2015, pages={332-338} }