Atıf Formatları
Trap levels in layered semiconductor TlInS<sub>1.9</sub>Se<sub>0.1</sub>

S. ÖZDEMİR Et Al. , "Trap levels in layered semiconductor TlInS1.9Se0.1," PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, pp.422-428, 2003

ÖZDEMİR, S. Et Al. 2003. Trap levels in layered semiconductor TlInS1.9Se0.1. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2 , 422-428.

ÖZDEMİR, S., HASANLI, N., & Bucurgat, M., (2003). Trap levels in layered semiconductor TlInS1.9Se0.1. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, 422-428.

ÖZDEMİR, SUAT, NIZAMI HASANLI, And MAHMUT BUCURGAT. "Trap levels in layered semiconductor TlInS1.9Se0.1," PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, 422-428, 2003

ÖZDEMİR, SUAT Et Al. "Trap levels in layered semiconductor TlInS1.9Se0.1." PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, pp.422-428, 2003

ÖZDEMİR, S. HASANLI, N. And Bucurgat, M. (2003) . "Trap levels in layered semiconductor TlInS1.9Se0.1." PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, pp.422-428.

@article{article, author={SUAT ÖZDEMİR Et Al. }, title={Trap levels in layered semiconductor TlInS1.9Se0.1}, journal={PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}, year=2003, pages={422-428} }