Dokme, İ. Et Al. 2006. The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer. APPLIED SURFACE SCIENCE , vol.252, no.22 , 7749-7754.

Dokme, İ., Altindal, Ş., & Bulbul, M. M., (2006). The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer. APPLIED SURFACE SCIENCE , vol.252, no.22, 7749-7754.

Dokme, İLBİLGE, ŞEMSETTİN ALTINDAL, And MEHMET MAHİR BÜLBÜL. "The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer," APPLIED SURFACE SCIENCE , vol.252, no.22, 7749-7754, 2006

Dokme, İLBİLGE Et Al. "The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer." APPLIED SURFACE SCIENCE , vol.252, no.22, pp.7749-7754, 2006

Dokme, İ. Altindal, Ş. And Bulbul, M. M. (2006) . "The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer." APPLIED SURFACE SCIENCE , vol.252, no.22, pp.7749-7754.

@article{article, author={İLBİLGE DÖKME Et Al. }, title={The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer}, journal={APPLIED SURFACE SCIENCE}, year=2006, pages={7749-7754} }