Alialy, S. Et Al. 2015. Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature. International Semiconductor Science Technology Conference , (İzmir, Turkey), 42.

Alialy, S., KAYA, A., USLU, İ., & ALTINDAL, Ş., (2015). Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature . International Semiconductor Science Technology Conference (pp.42). İzmir, Turkey

Alialy, Sahar Et Al. "Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature," International Semiconductor Science Technology Conference, İzmir, Turkey, 2015

Alialy, Sahar Et Al. "Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature." International Semiconductor Science Technology Conference , İzmir, Turkey, pp.42, 2015

Alialy, S. Et Al. (2015) . "Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature." International Semiconductor Science Technology Conference , İzmir, Turkey, p.42.

@conferencepaper{conferencepaper, author={Sahar Alialy Et Al. }, title={Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature}, congress name={International Semiconductor Science Technology Conference}, city={İzmir}, country={Turkey}, year={2015}, pages={42} }