DURMUŞ, H. Et Al. 2019. On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.30, no.9 , 9029-9037.

DURMUŞ, H., YILDIRIM, M., & ALTINDAL, Ş., (2019). On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.30, no.9, 9029-9037.

DURMUŞ, HAZİRET, MERT YILDIRIM, And ŞEMSETTİN ALTINDAL. "On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.30, no.9, 9029-9037, 2019

DURMUŞ, HAZİRET Et Al. "On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.30, no.9, pp.9029-9037, 2019

DURMUŞ, H. YILDIRIM, M. And ALTINDAL, Ş. (2019) . "On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.30, no.9, pp.9029-9037.

@article{article, author={HAZİRET DURMUŞ Et Al. }, title={On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400K}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2019, pages={9029-9037} }