I. M. Afandiyeva Et Al. , "Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier," JOURNAL OF ALLOYS AND COMPOUNDS , vol.552, pp.423-429, 2013
Afandiyeva, I. M. Et Al. 2013. Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier. JOURNAL OF ALLOYS AND COMPOUNDS , vol.552 , 423-429.
Afandiyeva, I. M., Demirezen, S., & Altindal, Ş., (2013). Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier. JOURNAL OF ALLOYS AND COMPOUNDS , vol.552, 423-429.
Afandiyeva, I., S. Demirezen, And ŞEMSETTİN ALTINDAL. "Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier," JOURNAL OF ALLOYS AND COMPOUNDS , vol.552, 423-429, 2013
Afandiyeva, I. M. Et Al. "Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier." JOURNAL OF ALLOYS AND COMPOUNDS , vol.552, pp.423-429, 2013
Afandiyeva, I. M. Demirezen, S. And Altindal, Ş. (2013) . "Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier." JOURNAL OF ALLOYS AND COMPOUNDS , vol.552, pp.423-429.
@article{article, author={I. M. Afandiyeva Et Al. }, title={Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier}, journal={JOURNAL OF ALLOYS AND COMPOUNDS}, year=2013, pages={423-429} }