Thesis Type: Postgraduate
Institution Of The Thesis: Gazi University, Turkey
Approval Date: 2016
Thesis Language: Turkish
Student: Neslihan Bozkurt
Consultant: AKİF ÖZBAYAbstract:
In this study, the production and characterization studies of wide band gap MgZnO thin films were carried out for different alloy ratios. MgZnO thin films onto corning glass, sapphire and silicon substrates were prepared by co-sputtering technique, which has a confocal target sputtering, under Ar gas pressure at room temperature. The deposition of MgZnO thin films was made at a constant RF power value of ZnO target and at a different RF power values of MgO target (40W, 50W, 75W and 100W). In addition, MgO thin films onto silicon, corning glass, sapphire substrates and ZnO thin films onto Silicon, corning glass substrates were deposited at different RF powers and at the same conditions. X-Ray diffraction measurements indicate that MgZnO thin films have hegzagonal wurtzite phase. Optical analysis of the produced thin films were determined by UV-Vis spectrometer. The energy gap (Eg) of thin films were calculated by absorption spectra. Mg contents in MgZnO thin films were obtained by optical spectral data. It was determined that energy band gap exhibited a parabolic change depending on RF powers and alloy ratios. The surface morphology of all films was investigated by Atomic Force Microscopy. Depending on analysis results, the effect of RF power on MgZnO thin films was discussed.