Research Information System
Thesis Type: Postgraduate
Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey
Approval Date: 2018
Student: MEHMET ÖZTÜRK
Supervisor: SEFER BORA LİŞESİVDİN
Abstract:In this study, Hall effect and sheet carrier density measurements of ultrathin barrier AlN/GaN and In0.17Al0.83N/GaN high electron mobility transistor (HEMT) structures by MOCVD technique were performed at a temperature of 15-300K and 0.5T magnetic field. As a result of measurements, 2-dimensional electron gas (2DEG) sheet carrier densities and mobility were calculated. Analysis of scattering mechanisms affecting electron mobility for each sample was made using Hall effect measurement results based on temperature. As a result of the scattering analysis, the parameters related to the samples as deformation potential, correlation length and quantum well width were determined.