Research Information System
Thesis Type: Postgraduate
Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey
Approval Date: 2016
Student: RIDVAN OKUR
Supervisor: SEMA BİLGE OCAK
Abstract:Al/ZnO/p-Si Schottky diodes were prepared in the same conditions and their current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics were measured at room temperature and in the dark. The characteristic parameters such as saturation current (I0), ideality factor (n), barrier height (ΦB) and series resistance (Rs) of the Al/ZnO/p-Si Schottky diodes were determined from the forward bias I-V characteristics by using thermionic emission theory. . The obtained values of n, ΦB and Rs (Cheung method) were changed in the ranges 0,60-0,70 eV, 0.51-0.802 eV and 1.46,3-3.19 k ve 1.5-3.62 k for dV/dLn(I)-I ve H(I)-I functions respectively. The frequency- dependent capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the Al/ZnO/p-Si structures were investigated by considering series resistance (RS) and interface states (Nss) effects. The C-V and G-V measurements of the Al/ZnO/p-Si structures were carried out in the frequency range of 30kHz-1 MHz at room temperature. Experimental results showed that both the values of C and G decreased as the frequency increased. Such behavior of C and G at low frequencies resulted from the existence of Nss at Si/ZnO2 interface. The effect of Rs on the C and G were found noticeable at high frequency. Therefore, the high frequencies Cm and Gm/w values measured under both forward and reverse bias were corrected for the effect of Rs to obtain the real Cc and Gc values from the sample. The profile of Rs exhibits an anomalous peak at each frequency about at zero-bias. The C-2-V plots displayed a linear behavior in a wide bias voltage region for each frequency value. The values of doping concentration NA, depletion layer width WD and barrier height ΦB were obtained from C-2-V plots.