METAL-YARIİLETKEN SCHOTTKY DİYOTLARIN ELEKTRİKSEL KARAKTERİSTİKLERİN FREKANS VE SICAKLIĞA BAĞLI İNCELENMESİ


Thesis Type: Postgraduate

Institution Of The Thesis: Gazi University, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2010

Thesis Language: Turkish

Student: İdris KAYA

Supervisor: ADEM TATAROĞLU

Abstract:

In this study, the frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/w-V) and the temperature dependent current-voltage (I-V) characteristics of the Au/n-GaAs metal-semiconductor (MS) Schottky diodes were investigated in the frequency and temperature ranges of 1 kHz-1 MHz and 300-400 K, respectively. According to thermionic emission (TE) theory, the electrical parameters as the ideality factor (n), zero bias barrier height (ΦBo) and interface state density (Nss) of these diodes were calculated from their experimental I-V measurements. Also, from ΦBo versus q/2kT plot was obtained the values of the mean barrier height and standard deviation at zero bias as 0.912 eV and 0.132 V for, respectively, Thus, from the modified [ln(Io/T2)-q2 σ o2/2k2T2] versus q/kT plot was obtained the values of B0 Φ and A* as 0.914 eV and 8.317 Acm-2K-2, respectively.