Research Information System
Thesis Type: Postgraduate
Institution Of The Thesis: Gazi University, Fen Bilimleri Enstitüsü, ileri teknolojiler, Turkey
Approval Date: 2019
Thesis Language: Turkish
Student: Ali Özbay
Supervisor: Sema Bilge Ocak
Abstract:Al/maleic anhydride (MA)/p-Si metalpolymersemiconductor (MPS) diodes have been prepared by spincoating of an organic film on p-Si substrate. After formation of omic and rectifier contacts by thermal evaporation technique the voltage dependent current, capacitance and conductivity measurements (1MHz) of structures have been performed at room temperature and in a dark environment. The diode parameters from the forward IV characteristics such as the ideality factor (n), barrier height (ΦB)and series resistance have been analyzed by four different methods. These methods are standard IV characteristics, Cheung, Norde, LienSoNicolet and Werner methods. The ideality factor, series resistance and barrier height values obtained from these methods have been compared and discussed in accordance with each other. The investigation of interface states density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in the MPS structures with thin interfacial insulator layer have been reported in order to explain the electrical characteristics of metal/polymer/semiconductor (MPS) with Maleic anhydride (MA) interface. The values of interface states density Ditand series resistance Rs were calculated from measurements of C and G. These values of Dit and Rs were responsible for the non-ideal behavior of I-V and C-V characteristics. TheI-V, C-V-f and G-V-f characteristics confirmed that the barrier height, Dit and Rs of the diode were shown parameters that strongly dependent on the electrical parameters in the MPS structures