Research Information System
Thesis Type: Postgraduate
Institution Of The Thesis: Gazi University, Turkey
Approval Date: 2019
Thesis Language: Turkish
Student: Mehmet Taha Haliloğlu
Supervisor: SEFER BORA LİŞESİVDİN
Abstract:Transistors have a significant role in semiconductor technology. Transistors are mainly composed of three components as source, drain and gate metals. These structures provide electrical conduction by placing the source, drain and gate metals on a semiconductor. High power, high frequency and fast switching operations can be made by these structures. Recently, transistors or monolithic microwave integrated circuits (MMIC) are designed and manufactured according to different needs. Various methods have been developed to improve the performance and optimization of these devices produced for different purposes. One of these methods is the via hole application. In the part of so-called back side processes of semiconductor device production, a well opening process for contacting the material with the device metals on the front side is referred to as the via hole. With this method substrates are thinned to 100 μm from back-side, contact is provided to weld metal on the front side. The weld metal is grounded from the bottom of the substrate by this contact. This method has been developed by aiming to reduce the inductance of source metal electrically. The via hole process was performed on the silicon carbide (SiC) material known as the hardest material after diamond. The optimization and dry etching mechanism of the via hole process with fluorine-based dry etching method of SiC material by using reactive ion etching system (ICP RIE) with inductive coupled plasma has been reported on this study. With describing whole via hole dry etching process back-side operations are discussed. The SEM system was used to analyze the results of the etching process. As a result of DC measurement, it has been show that the resistance of SiC via hole structures were analyzed.