Thesis Type: Postgraduate
Institution Of The Thesis: Gazi University, Turkey
Approval Date: 2015
Thesis Language: Turkish
Student: Halil Mert Baran
Supervisor: ADEM TATAROĞLUAbstract:
In this work, the effects of gamma radiation on the electrical characteristics of metal-oxide-semiconductor (MOS) capacitors were investigated. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements of Au/SnO2/n-Si (MOS) capacitor before and after exposure to gamma radiation were carried out in the frequency range of 1 kHz-1 MHz and in a total radiation dose range of 0-100 kGy, respectively. Experimental results show that capacitance and conductance values of the capacitor decrease with the increasing frequency and radiation dose. Also, the values of the interface states (Nss) and series resistance (Rs) were determined by using these measurements. The values of series resistance increase with the increasing radiation dose as a result of radiation-generated trapped charges. The values of interface states decrease with the increase in radiation dose due to the decrease in the number of recombination centers at oxide/semiconductor. The obtained results indicate that the electrical characteristics of the MOS capacitor depend on gamma radiation.