Thesis Type: Postgraduate
Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey
Approval Date: 2012
Student: GÜLSER KARAKOÇ
Supervisor: SEFER BORA LİŞESİVDİN
Abstract:In this study, Hall measurement and conductivity analyse have been investigated for 3 samples of AlInN/AlN/(InGaN)/GaN multi-structures with InxGa1-xN- quantum well grown by MOVPE crystal growth method. Resistivities, Hall mobilities and carrier concentrations were measured in a temperature range of 15-300K and 0,4T magnetic field. Electron transport characteristics of the samples with the values of x =0 , 0,12 and 0,18 were explained. Also, upon of scattering mechanisms that effect the mobility of electrons were discussed. Resistivity analyses were performed which are dependent to the resistivity measurements.