Investigated Of Electric And Dielectric Properties Of Auge/Sio2/P- Si/Auge (Mos) Capacitor

Thesis Type: Postgraduate

Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2015




In this thesis, firstly the admittance measurements (capacitance and conductivity) of AuGe/SiO2/p-Si/AuGe (MOS) capacitor were carried out with for wide range of the temperature (100 K 400 K) and frequency (100 kHz 1 MHz). The measurements show that value of capacitance (C) and conductivity (G) increase with the increasing temperature. The increment in these values is due to the interfacial space charge formation and increment in thermal activation charges. The temperature dependence of dielectric constant (ɛ'), loss (ɛ''), loss tangent (tan δ) and a.c. conductivity (σac) of the capacitor were calculated by using these admittance measurements. Then, the impedance measurements of MOS capacitor were carried out with a wide range of frequency and applied d.c. bias voltage. The value of parallel resistor (Rp), capacitor (Cp), and series resistance (Rs) were obtained from these measurement results and the dielectric parameters were calculated. Consequently, both electrical and dielectric parameters of the MOS capacitor depend on the frequency and temperature variations.