Investıgatıon Of Dıelectrıc Propertıes Of Au/Si3n4/P-Gaas (Mos) Capacıtor

Thesis Type: Postgraduate

Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2019




In this study, the silicon nitride (Si3N4) film as interfacial dielectric layer was deposited by using the radio frequency (RF) magnetron sputtering method on p-GaAs having ohmic contact. Thus, the Au/Si3N4/p-GaAs metal-oxide-semiconductor (MOS) capacitor was prepared by forming a rectifier contact on the film. Dielectric properties such as dielectric constant (ε'), dielectric loss (ε''), dielectric loss tangent (tanδ), ac conductivity (σac) and complex electric modulus of the MOS capacitor were investigated in the frequency range of 5 kHz-1 MHz and temperature range of 150-350 K. All dielectric parameters were calculated using measured capacitance (C) and conductance (G/ω) data. While the obtained ε' and ε'' values decrease with increasing frequency, they increase with increasing temperature. The obtained σac value increases with an increase in both frequency and temperature. Also, the Arrhenius plot of σac shows two activation energies in the measured temperature range. The obtained experimental results showed that both electrical and dielectric characteristics are dependent on frequency and temperature. As a result, the prepared MOS capacitor can be used as a circuit element in electronics circuits