Modelıng And Applıcatıon Of Plasma Processes In Semıconductor Gas Dıscharge System

Thesis Type: Doctorate

Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2019

Thesis Language: Turkish




In this study, we have investigated the changes in the infrared values by using DC argon plasma and air systems. In DC Argon plasma systems, different semiconductor materials are used as cathode and SnO2 coated glass plate is defined as an anode. Both theoretically and experimentally researches have been made for different pressures (p) and electrode distance (d). In theoretical calculations, Argon gas was used in our system for plasma formation. Multivariate values were observed for different p and d values by using plasma parameters, especially at low-pressure values, but no significant change was observed at atmospheric pressure level or close for theoretical calculations depending on the p and d values. Theoretically, electron temperature, average electron energy, mobility, electrical potential, surface charge density, thermal velocity, spatial charge density, electron density and Townsend coefficients were calculated. By measuring the secondary emission coefficient values, the Paschen curves of the plasma system are determined based on the different parameters. The results obtained here determined the operating voltage of the plasma system and how the most efficient current-voltage characteristic should be. The voltage applied in experimental studies is between 200 V – 2000 V and our theoretical studies have been completed by using AC-DC module and Plasma module of COMSOL Multiphysics program