The ınvestıgatıon of dıelectrıc propertıes of Au/Si3N4/n-Si structures

Thesis Type: Postgraduate

Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2011




In this study, dielectric properties of Au/Si3N4/n-Si (MIS) structure were investigated in the frequency range of 1 kHz-1 MHz and temperature range of 80-400 K. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements were performed by use of HP 4192A LF Impedance Analyser having a frequency range of 5 Hz-13 MHz. In calculations of dielectric parameters, the C-V and G/ω-V measurements were used. Experimental results show that both electrical and dielectric parameters are dependent on frequency and temperature. Dielectric constant (ε') and dielectric loss (ε'') decrease with increasing frequency while increase with increasing temperature. Also, the ac conductivity increases with both increasing frequency and temperature. Moreover, from experimental results, it was found that interfacial polarization is dominant in low-frequency region and orientational polarization is dominant in high-frequency region.