Investigation of electricity properties of metal oxidesemiconductor doped lead oxide

---

Thesis Type: Postgraduate

Institution Of The Thesis: Gazi University, Fen Bilimleri Enstitüsü, -, Turkey

Approval Date: 2017

Thesis Language: Turkish

Student: İlhan Cıbır

Supervisor: Sema Bilge Ocak

Abstract:

In this study, Al/PbO/p-Si structures were fabricated. Their current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of these structures were measured at room temperature and in the dark. Ideality factor, series resistance, barrier height and flat band barrier height of Al/PbO/p-Si structures were calculated from the forward bias I-V characteristics by using thermionic emission theory. The C-V and G-V measurements of the Al/PbO/p-Si structures were measured in the frequency range of 10 kHz - 1 MHz at room temperature. Experimental results showed that both the values of C and G decreased as the frequency increased. Such behavior of C and G at low frequencies resulted from the existence of interface states at Si/PbO interface.