Research Information System
Thesis Type: Postgraduate
Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey
Approval Date: 2016
Student: MEHMET MÜRŞİT SİNCAR
Supervisor: SELİM ACAR
Open Archive Collection: AVESIS Open Access Collection
Abstract:In this study, Al/Al2O3/p-Si, Al/TiO2/p-Si and Al/TiO2/Al2O3/p-Si metal oxide semiconductor structures are produced by Atomic Layer Deposition Method (ALD). The NO2 gas sensing properties of samples are investigated with different temperatures from 30 ˚C to 250 ˚C for obtaining the operating temperature with constant 100 ppm. The operation temperature is obtained 200 ˚C for all samples. To investigate the effect of NO2 sensing properties at 200 ˚C,the response of samples are exposure to different concentrations ofNO2 in dry airas afunction of the gas concentration. The maximum sensitivity is obtained 65 % for Al/TiO2/Al2O3/p-Si, it is obtained 10 % for Al/Al2O3/p-Si. The electrical characterizations of samples, for investigating NO2 gas sensing properties at room temperature, for different gas concentrations are carried out under 254 nm UV light. The response of Al/TiO2/Al2O3/p-Si is calculated 19%, it is obtained 11% for Al/TiO2/p-Si and 0,8% for Al/Al2O3/p-Si. It can be noted that 20 ppm NO2 gas concentration is obtained for Al/TiO2/Al2O3/p-Si and Al/TiO2/p-Si at room temperature. TiO2/Al2O3 is showed the maximum sensitivity to NO2 gas compared to other samples.