Thesis Type: Postgraduate
Institution Of The Thesis: Gazi University, Fen Bilimleri Enstitüsü, Turkey
Approval Date: 2010
Thesis Language: Turkish
Student: Faruk KİRAZOĞLU
Supervisor: ADEM TATAROĞLUAbstract:
In this study, the frequency and temperature dependent capacitance-voltage (CV) and conductance-voltage (G/w-V) characteristics of the Au/SnO2/n-Si (MIS) structure were investigated by considering series resistance (Rs) and interface state (Nss) effects in the frequency and temperature ranges of 100 Hz-1 MHz and 100-400 K, respectively. The values of Nss and Rs were determined to be strongly dependent on the frequency and temperature. The series resistance decreases both with increasing frequency and with increasing temperature. Also, the measured capacitance (Cm) and conductance (Gm/w) values were corrected for the effect of series resistance to obtain the real capacitance and conductance of MIS structure. Experimental results show that an interfacial insulator layer thickness between metal and semiconductor, series resistance and interface states play an important role on the electrical characteristics of MIS structure.