Fabrıcatıon Methods Of T Profıle Gates For Algan / Gan Hemts (Hıgh Electron Mobılıty Transıstors)


Thesis Type: Postgraduate

Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2018

Student: UĞUR KÖROĞLU

Supervisor: AYŞE AYDOĞDU

Abstract:

Transistors are semiconductor electronic circuit elements that are used as switching elements and also provide voltage and current gain by raising the signal which is applied to the input. Transistors are one of the most important units of electronic devices. Electronic devices used in the daily life may have a number of transistors from several to several billion. High electron mobility transistors (HEMT) have emerged as a promising technology for high power, frequency and high capacity applications due to the electron transport characteristic. The HEMT is a field-effect transistor that includes a junction between two materials of different band gap to provide a current flow in a channel instead of the dope zone. It is voltage controlled and three-pin component. The pins of the HEMT are defined as G (Gate), D (Drain) and S (Source). The current between the source and the drain terminals can be controlled by a third terminal (gate). According to the working principle of the HEMT, electrons flow from the drain to the source and this current can be controlled by applying the electric field to the gate. The gate production is one of the most critical and most sensitive steps of fabrication. In this work, the production and types of gates are explained in AlGaN / GaN HEMTs. Scanning electron microscope (SEM) analysis of different types of gate structures were made and gate structures were tested by performing current-voltage measurements of the devices.