The Investıgatıon Of Electrıcal Propertıes Of Au/Tio2/N-Si (Mıs) Structure

Thesis Type: Postgraduate

Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey

Approval Date: 2017




The electrical properties of Au/TiO2/n-Si (MIS) structure have been investigated by using current-voltage (I-V) performed in the temperature range of 240-400 K and capacitance/conductance-voltage (C/G/ω-V) performed in the frequency range of 1 kHz-1 MHz measurements. The titanium dioxide (TiO2) insulator layer was prepared by radio frequency (RF)-magnetron sputtering method on n-Si substrate. The electrical parameters such as ideality factor (n), barrier height (ΦB) and series resistance (Rs) of the MIS structure were determined from the forward bias I-V measurements. From thermionic emission (TE) theory, it was found that the n value decreases while the ΦB value increases with increasing temperature. This anomaly behavior in the I-V characteristics is due to the non-homogeneity of the barrier heights. The inhomogeneities can be explained by the Gaussian distribution of barrier heights. Also, both C and G/ω value decrease with increasing frequency. The frequency dependence C and G/ω is attributed to the presence of interface states. In addition, the parameters such as the fermi energy level (EF), concentration of donor doping atoms (ND), barrier height (ΦB) and depletion layer width (WD) were obtained from C-2-V curves. The obtained experimental results showed that the electrical parameters of the prepared MIS structure considerably depend on both frequency and temperature.