Thesis Type: Postgraduate
Institution Of The Thesis: Gazi Üniversitesi, Fen Bilimleri Enstitüsü, Turkey
Approval Date: 2012
Student: FATMA ZEHRA PÜR
Supervisor: ADEM TATAROĞLUAbstract:
In the present work, we investigated the current-voltage (I-V) characteristics of Au/Si3N4/n-Si (MIS) Schottky diode in the temperature range of 160-400 K. By using the thermionic emission (TE) theory, the forward bias I-V characteristics were analyzed to estimate the MIS Schottky diode parameters. The semilogarithmic lnI-V characteristics based on the TE mechanism showed a decrease in the ideality factor (n) and an increase in the zero-bias barrier height (ΦBo) with an increasing temperature. The values of n and ΦBo were changed from 9,50 and 0,34 eV (at 160 K) to 3,43 and 0,74 eV (at 400 K), respectively. Furthermore, the temperature dependence of energy distribution of interface states (Nss) was obtained from the forward bias I-V measurements by taking the bias dependence effective barrier height into account. Also, from ΦBo versus q/2kT plot was obtained the values of the mean barrier height and standard deviation at zero bias as 0,999 eV and 0,137 V for, respectively, Thus, from the modified [ln(Io/T2)-q2σo 2/2k2T2] versus q/kT plot was obtained the values of B0 Φ and A* as 0,992 eV and 108,228 Acm-2K-2, respectively.