Analysis of the Homogeneous Interface State Density of Identically Prepared Schottky Structures with Nano-Size Oxide Layer by Hill-Coleman Method

Koralay H. , Tuğluoğlu N., Akgul K. B. , Çavdar Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.10, no.2, pp.195-199, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 2
  • Publication Date: 2015
  • Doi Number: 10.1166/jno.2015.1727
  • Page Numbers: pp.195-199


In the present paper, 25 dots of the Au/n-Si/Al Schottky diode have been prepared on the same n-type Si wafer by evaporation of Au as Schottky contact. The some parameters of Schottky diodes have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at 1 MHz. The values of measured capacitance (C-m) and conductance (G(m)) under both reverse and forward bias have been corrected for the effect of series resistance to obtain the real the interface state density (N-ss) values. The values of the N-ss and Rs of the diodes ranged from 3.566 x 10(12) to 6.024 x 10(12) eV(-1) cm(-2) and from 39.42 to 45.28 Omega from the reverse bias C-V and G-V measurements. Furthermore, the mean values of R-s and N-ss were found to be 41.01 Omega and 4.858 x 10(12) eV(-1) cm(-2), respectively.