Stokes shift and band gap bowing in InxGa1-xN (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy


Yildiz A., Dagdelen F., ACAR S. , LİŞESİVDİN S. B. , Kasap M. , AYDOĞDU Y. , ...More

ACTA PHYSICA POLONICA A, vol.113, no.2, pp.731-739, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 113 Issue: 2
  • Publication Date: 2008
  • Doi Number: 10.12693/aphyspola.113.731
  • Title of Journal : ACTA PHYSICA POLONICA A
  • Page Numbers: pp.731-739

Abstract

We presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for InxGa1-xN alloys is well fitted with a bowing parameter of approximate to 3.6 eV.