Detailed Analysis of Device Parameters by Means of Different Techniques in Schottky Devices


TUĞLUOĞLU N., KORALAY H. , Akgul K. B. , ÇAVDAR Ş.

JOURNAL OF ELECTRONIC MATERIALS, vol.45, no.8, pp.3859-3865, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 8
  • Publication Date: 2016
  • Doi Number: 10.1007/s11664-016-4580-8
  • Title of Journal : JOURNAL OF ELECTRONIC MATERIALS
  • Page Numbers: pp.3859-3865
  • Keywords: Schottky device, I-V, C-V, barrier height, ideality factor, density of interface state, CURRENT-VOLTAGE CHARACTERISTICS, INTERFACE-STATE DENSITY, SPIN-COATING TECHNIQUE, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, BARRIER DIODES, TEMPERATURE-DEPENDENCE, OXIDE LAYER, SI, CONTACTS

Abstract

In the present work, the detailed device parameters of Au/n-Si (100)/Al Schottky devices are calculated by means of the conductance-voltage-frequency (G-V-f), capacitance-voltage-frequency (C-V-f) and current-voltage (I-V) measurements at 300 K. The structure of the device shows a good rectifying behavior. The barrier height (Phi(B)) value of 0.822 eV from the C-V is determined to be higher than the 0.774 eV from the I-V. The barrier height (Phi(B)) and series resistance (R-s) values of the sample determined from the Cheung and Cheung technique are 0.755 eV and 220.5 Omega, respectively. The values of the carrier donor concentration (N-D), the level of Fermi (E-F), the lowering of image force (Delta Phi(b)), the space charge layer width (W-D) and the maximum electric field (E-max) are determined as 1.305 x 10(15) cm(-3), 0.258 eV, 0.0136 eV, 7.6 x 10(-5) cm and 1.52 x 10(4) V/cm, respectively. The density of the interface state (N-ss) determined from the I-V characteristic ranges from 8.80 x 10(12) eV(-1) cm(-2) to 5.44 x 10(11) eV(-1) cm(-2).