In the present work, the detailed device parameters of Au/n-Si (100)/Al Schottky devices are calculated by means of the conductance-voltage-frequency (G-V-f), capacitance-voltage-frequency (C-V-f) and current-voltage (I-V) measurements at 300 K. The structure of the device shows a good rectifying behavior. The barrier height (Phi(B)) value of 0.822 eV from the C-V is determined to be higher than the 0.774 eV from the I-V. The barrier height (Phi(B)) and series resistance (R-s) values of the sample determined from the Cheung and Cheung technique are 0.755 eV and 220.5 Omega, respectively. The values of the carrier donor concentration (N-D), the level of Fermi (E-F), the lowering of image force (Delta Phi(b)), the space charge layer width (W-D) and the maximum electric field (E-max) are determined as 1.305 x 10(15) cm(-3), 0.258 eV, 0.0136 eV, 7.6 x 10(-5) cm and 1.52 x 10(4) V/cm, respectively. The density of the interface state (N-ss) determined from the I-V characteristic ranges from 8.80 x 10(12) eV(-1) cm(-2) to 5.44 x 10(11) eV(-1) cm(-2).