Analysis of the Structural, Electronic and Optic Properties of Ni Doped MgSiP2 Semiconductor Chalcopyrite Compound

Kocak B., ÇİFTCİ Y.

9th International Physics Conference of the Balkan-Physical-Union (BPU), İstanbul, Turkey, 24 - 27 August 2015, vol.1722 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1722
  • Doi Number: 10.1063/1.4944245
  • City: İstanbul
  • Country: Turkey
  • Gazi University Affiliated: Yes


The structural, electronic band structure and optic properties of the Ni doped MgSiP2 chalcopyrite compound have been performed by using first-principles method in the density functional theory (DFT) as implemented in Vienna Ab-initio Simulation Package (VASP). The generalized gradient approximation (GGA) in the scheme of Perdew, Burke and Ernzerhof (PBE) is used for the exchange and correlation functional. The present lattice constant (a) follows generally the Vegard's law. The electronic band structure, total and partial density of states (DOS and PDOS) are calculated. We present data for the frequency dependence of imaginary and real parts of dielectric functions of Ni doped MgSiP2. For further investigation of the optical properties the reflectivity, refractive index, extinction coefficient and electron energy loss function are also predicted. Our obtained results indicate that the lattice constants, electronic band structure and optical properties of this compound are dependent on the substitution concentration of Ni.