Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device
Gazi University Journal of Science Part A: Engineering and Innovation, cilt.10, sa.1, ss.89-96, 2023 (TRDizin)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 10 Sayı: 1
- Basım Tarihi: 2023
- Doi Numarası: 10.54287/gujsa.1207057
- Dergi Adı: Gazi University Journal of Science Part A: Engineering and Innovation
- Derginin Tarandığı İndeksler: TR DİZİN (ULAKBİM)
- Sayfa Sayıları: ss.89-96
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Gazi Üniversitesi Adresli: Evet
Özet
Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.