The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure


Oezdemir A. F., Kotan Z., ALDEMİR D. A., Altindal Ş.

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.46, sa.2, 2009 (SCI-Expanded) identifier identifier

Özet

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-organic compound conductive polymer-semiconductor Al/P2ClAn(C2H5COOH)/p-Si structures were measured in the temperature range 80-340 K. P2ClAn: the poly(2-chloroaniline). The P2ClAn emeraldine salt was synthesized chemically by using propionic (C2H5COOH) acid. The analysis of I-V characteristics based on the thermoionic emission (TE) mechanism has revealed a decrease of zero-bias barrier height and a increase of the ideality factor at lower temperatures. Temperature dependence of the barrier height (BH) has shown a disagreement with those calculated from C-V characteristics. This behaviour is attributed to Schottky barrier inhomogeneities at interface. The temperature coefficient of BH has been found to be -2.9 x 10(-4) eV/K for Al/P2ClAn(C2H5COOH)/p-Si. In(I-0/T-2) versus 1/T plot gives activation energy and Richardson constant A* as 0.12 eV and 3.82 x 10(-9) A/K-2 cm(2), respectively.