OPTOELECTRONICS AND ADVANCED MATERIALS, RAPID COMMUNICATIONS, cilt.18, ss.296-304, 2024 (SCI-Expanded)
The rapid development of semiconductor materials in recent years has enabled the use of semiconductors as
photodetectors in the field of infrared (IR) sensing and imaging applications. In the near-IR region, HgCdTe (MCT) is useful
in remote sensing systems with its high quantum efficiency, high sensitivity, high photon detection capacity, minimal photon
loss and long wavelength heterojunction photodiode features. MCT semiconductor material continues to be intensively
developed and used in various fields of optoelectronics since its synthesis in 1958. This conceptual research study aimed to
identify the unique transition regimes between electron emission and electrical breakdown states in gas discharge
semiconductor microplasma systems (GDSS), and to truly establish the basis for modeling highly efficient infrared-visible
image converter devices for advanced optoelectronic applications. A MCT material -coupled direct current glow-discharges
were numerically studied and reported with unique surface plasma patterns across 100 µm gap in binary argon/hydrogen
(Ar/H2) gas model, where H2 is added to Ar at 10% molar fraction. Theoretical analyzes were also carried out to investigate
and compare the effects of atmospheric and hyper-atmospheric pressures of binary Ar/H2 gas models on the spatiotemporal
key discharge parameters. Numerical analysis results of the spatiotemporal discharge parameters including, electron
density (ED), electron energy density (EED), and electron current density (ECD), obtained from the proposed GDSS
simulation models, have revealed that a significant contribution can be made to increasing ion-induced secondary electron
emission (SEE) yield in hydrogen-added argon gas medium at hyper-atmospheric pressure.