The investigation of direct current microdischarges in HgCdTe -coupled Ar/H2 gas medium at atmospheric and hyper-atmospheric pressures

Yücel H. H., Utaş S., Ongun E.



The rapid development of semiconductor materials in recent years has enabled the use of semiconductors as photodetectors in the field of infrared (IR) sensing and imaging applications. In the near-IR region, HgCdTe (MCT) is useful in remote sensing systems with its high quantum efficiency, high sensitivity, high photon detection capacity, minimal photon loss and long wavelength heterojunction photodiode features. MCT semiconductor material continues to be intensively developed and used in various fields of optoelectronics since its synthesis in 1958. This conceptual research study aimed to identify the unique transition regimes between electron emission and electrical breakdown states in gas discharge semiconductor microplasma systems (GDSS), and to truly establish the basis for modeling highly efficient infrared-visible image converter devices for advanced optoelectronic applications. A MCT material -coupled direct current glow-discharges were numerically studied and reported with unique surface plasma patterns across 100 µm gap in binary argon/hydrogen (Ar/H2) gas model, where H2 is added to Ar at 10% molar fraction. Theoretical analyzes were also carried out to investigate and compare the effects of atmospheric and hyper-atmospheric pressures of binary Ar/H2 gas models on the spatiotemporal key discharge parameters. Numerical analysis results of the spatiotemporal discharge parameters including, electron density (ED), electron energy density (EED), and electron current density (ECD), obtained from the proposed GDSS simulation models, have revealed that a significant contribution can be made to increasing ion-induced secondary electron emission (SEE) yield in hydrogen-added argon gas medium at hyper-atmospheric pressure.